Invention Grant
- Patent Title: Superconducting magnesium boride thin-film and process for producing the same
- Patent Title (中): 超导硼化镁薄膜及其制造方法
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Application No.: US11909512Application Date: 2006-03-22
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Publication No.: US07985713B2Publication Date: 2011-07-26
- Inventor: Yoshitomo Harada , Masahito Yoshizawa , Haruyuki Endo
- Applicant: Yoshitomo Harada , Masahito Yoshizawa , Haruyuki Endo
- Applicant Address: JP Morioka-shi
- Assignee: Incorporated National University Iwate University
- Current Assignee: Incorporated National University Iwate University
- Current Assignee Address: JP Morioka-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2005-089080 20050325
- International Application: PCT/JP2006/306397 WO 20060322
- International Announcement: WO2006/101255 WO 20060928
- Main IPC: C01B35/04
- IPC: C01B35/04 ; C23C14/24 ; B05D3/00 ; H01L39/00 ; H01L39/24 ; H01B13/00

Abstract:
A magnesium boride thin film having a B-rich composition represented by the general formula of MgBx (x=1 to 10) and a superconducting transition temperature of 10K or more has superior crystallinity and orientation and is used as a superconducting material. This thin film is formed by maintaining a film forming environment in a high vacuum atmosphere of 4×10−5 Pa or less, and simultaneously depositing Mg and B on a substrate maintained at a temperature of 200° C. or less so as to grow the film at a growth rate of 0.05 nm/sec or less. It is preferable to supply an Mg vapor and a B vapor into the film forming environment at an Mg/B molar ratio of 1/1 to 12/1.
Public/Granted literature
- US20090062128A1 SUPERCONDUCTING MAGNESIUM BORIDE THIN-FILM AND PROCESS FOR PRODUCING THE SAME Public/Granted day:2009-03-05
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