Invention Grant
- Patent Title: Voltage excited piezoelectric resistance memory cell system
- Patent Title (中): 电压激励压电电阻存储单元系统
-
Application No.: US12445884Application Date: 2009-02-16
-
Publication No.: US07985960B2Publication Date: 2011-07-26
- Inventor: Gilbert Springer
- Applicant: Gilbert Springer
- Applicant Address: AU Perth, WA
- Assignee: 4D-S Pty Ltd.
- Current Assignee: 4D-S Pty Ltd.
- Current Assignee Address: AU Perth, WA
- Agency: Sawyer Law Group, P.C.
- International Application: PCT/US2009/034222 WO 20090216
- International Announcement: WO2009/103054 WO 20090820
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
The present invention discloses a memory system comprising a plurality of crystals, and at least two conductors. The at least two conductors being orthogonal to each other. Wherein at least one of the plurality of crystals are bounded by the orthogonal intersection of the at least two conductors.
Public/Granted literature
- US20100276655A1 VOLTAGE EXCITED PIEZOELECTRIC RESISTANCE MEMORY CELL SYSTEM Public/Granted day:2010-11-04
Information query
IPC分类:
