Invention Grant
- Patent Title: Memristive device
- Patent Title (中): 忆阻器
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Application No.: US12342399Application Date: 2008-12-23
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Publication No.: US07985962B2Publication Date: 2011-07-26
- Inventor: Alexandre M. Bratkovski , Douglas Ohlberg , Jianhua Yang
- Applicant: Alexandre M. Bratkovski , Douglas Ohlberg , Jianhua Yang
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A memristive device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least one of the first and second electrodes is a metal oxide electrode.
Public/Granted literature
- US20100155686A1 MEMRISTIVE DEVICE Public/Granted day:2010-06-24
Information query
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