Invention Grant
- Patent Title: Light emitting device having protrusion and recess structure and method of manufacturing the same
- Patent Title (中): 具有突出和凹陷结构的发光器件及其制造方法
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Application No.: US12842141Application Date: 2010-07-23
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Publication No.: US07985972B2Publication Date: 2011-07-26
- Inventor: Hyun-soo Kim , Jeong-wook Lee
- Applicant: Hyun-soo Kim , Jeong-wook Lee
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: KR10-2005-0052044 20050616
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L31/12 ; H01L33/00
Abstract:
The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on the upper clad layer; and a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.
Public/Granted literature
- US20110006337A1 LIGHT EMITTING DEVICE HAVING PROTRUSION AND RECESS STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-01-13
Information query
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