Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US12638354Application Date: 2009-12-15
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Publication No.: US07985981B2Publication Date: 2011-07-26
- Inventor: Rei Hashimoto , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
- Applicant: Rei Hashimoto , Yasushi Hattori , Takahiro Sato , Jongil Hwang , Maki Sugai , Yoshiyuki Harada , Shinji Saito , Shinya Nunoue
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-321406 20081217
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/58
Abstract:
There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.
Public/Granted literature
- US20100148203A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2010-06-17
Information query
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