Invention Grant
- Patent Title: MOSFET package
- Patent Title (中): MOSFET封装
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Application No.: US12046741Application Date: 2008-03-12
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Publication No.: US07985991B2Publication Date: 2011-07-26
- Inventor: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
- Applicant: Ryoichi Kajiwara , Masahiro Koizumi , Toshiaki Morita , Kazuya Takahashi , Munehisa Kishimoto , Shigeru Ishii , Toshinori Hirashima , Yasushi Takahashi , Toshiyuki Hata , Hiroshi Sato , Keiichi Ookawa
- Applicant Address: JP Kanagawa JP Gunma
- Assignee: Renesas Electronics Corporation,Hitachi Tohbu Semiconductor, Ltd.
- Current Assignee: Renesas Electronics Corporation,Hitachi Tohbu Semiconductor, Ltd.
- Current Assignee Address: JP Kanagawa JP Gunma
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP11-019431 19990128; JP11-160539 19990608
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L21/00 ; H01R9/00

Abstract:
A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.
Public/Granted literature
- US20080169537A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-07-17
Information query
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