Invention Grant
US07985994B2 Flux-closed STRAM with electronically reflective insulative spacer
有权
带电子反射绝缘垫片的焊剂封闭STRAM
- Patent Title: Flux-closed STRAM with electronically reflective insulative spacer
- Patent Title (中): 带电子反射绝缘垫片的焊剂封闭STRAM
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Application No.: US12239884Application Date: 2008-09-29
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Publication No.: US07985994B2Publication Date: 2011-07-26
- Inventor: Yuankai Zheng , Dimitar V. Dimitrov
- Applicant: Yuankai Zheng , Dimitar V. Dimitrov
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Campbell Nelson Whipps LLC
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Flux-closed spin-transfer torque memory having a specular insulative spacer is disclosed. A flux-closed spin-transfer torque memory unit includes a multilayer free magnetic element including a first free magnetic layer anti-ferromagnetically coupled to a second free magnetic layer through an electrically insulating and electronically reflective layer. An electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic element from a reference magnetic layer.
Public/Granted literature
- US20100078742A1 FLUX-CLOSED STRAM WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER Public/Granted day:2010-04-01
Information query
IPC分类:
