Invention Grant
- Patent Title: Zr-substituted BaTiO3 films
- Patent Title (中): Zr取代的BaTiO3膜
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Application No.: US11498559Application Date: 2006-08-03
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Publication No.: US07985995B2Publication Date: 2011-07-26
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/108
- IPC: H01L21/108 ; H01L29/94

Abstract:
The use of atomic layer deposition (ALD) to form a zirconium substituted layer of barium titanium oxide (BaTiO3), produces a reliable ferroelectric structure for use in a variety of electronic devices such as a dielectric in nonvolatile random access memories (NVRAM), tunable dielectrics for multi layer ceramic capacitors (MLCC), infrared sensors and electro-optic modulators. The structure is formed by depositing alternating layers of barium titanate and barium zirconate by ALD on a substrate surface using precursor chemicals, and repeating to form a sequentially deposited interleaved structure of desired thickness and composition. Such a layer may be used as the gate insulator of a MOSFET, or as a capacitor dielectric. The properties of the dielectric may be tuned by adjusting the percentage of zirconium to titanium to optimize properties such as a dielectric constant, Curie point, film polarization, ferroelectric property and a desired relaxor response.
Public/Granted literature
- US20080032424A1 ALD of Zr-substituted BaTiO3 films as gate dielectrics Public/Granted day:2008-02-07
Information query
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