Invention Grant
- Patent Title: FINFET-type semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10549291Application Date: 2004-03-19
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Publication No.: US07986002B2Publication Date: 2011-07-26
- Inventor: Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
- Applicant: Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-078002 20030320
- International Application: PCT/JP2004/003808 WO 20040319
- International Announcement: WO2004/084292 WO 20040930
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
Public/Granted literature
- US20060208300A1 Finfet-type semiconductor device and method for fabricating the same Public/Granted day:2006-09-21
Information query
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