Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11828616Application Date: 2007-07-26
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Publication No.: US07986003B2Publication Date: 2011-07-26
- Inventor: Shinji Aono , Hideki Takahashi , Yoshifumi Tomomatsu , Junichi Moritani
- Applicant: Shinji Aono , Hideki Takahashi , Yoshifumi Tomomatsu , Junichi Moritani
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-036512 20070216
- Main IPC: H01L29/739
- IPC: H01L29/739
Abstract:
A carrier storage layer is located in a region of a predetermined depth from a surface of an N− substrate, a base region is located in a shallower region than the predetermined depth and an emitter region is located in a surface of the N− substrate. The carrier storage layer is formed by phosphorus injected to have a maximum impurity concentration at the predetermined depth, the base region is formed by boron injected to have the maximum impurity concentration at a shallower position than the predetermined depth and the emitter region is formed by arsenic injected to have the maximum impurity concentration at the surface of the N− substrate. An opening is formed to extend through the emitter region, base region and the carrier storage layer. On the inner wall of the opening, a gate electrode is formed with a gate insulating film therebetween.
Public/Granted literature
- US20080197379A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-08-21
Information query
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