Invention Grant
- Patent Title: Short circuit limiting in power semiconductor devices
- Patent Title (中): 功率半导体器件的短路限制
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Application No.: US11829311Application Date: 2007-07-27
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Publication No.: US07986005B2Publication Date: 2011-07-26
- Inventor: Oliver Schilling , Frank Pfirsch
- Applicant: Oliver Schilling , Frank Pfirsch
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria Ag
- Current Assignee: Infineon Technologies Austria Ag
- Current Assignee Address: AT Villach
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A power semiconductor device includes a semiconductor body. The semiconductor body includes a body region of a first conductivity type for forming therein a conductive channel of a second conductivity type; a gate electrode arranged next to the body region; and a floating electrode arranged between the gate electrode and the body region.
Public/Granted literature
- US20090026532A1 SHORT CIRCUIT LIMITING IN POWER SEMICONDUCTOR DEVICES Public/Granted day:2009-01-29
Information query
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