Invention Grant
- Patent Title: Semiconductor device and process for manufacturing same
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US12345015Application Date: 2008-12-29
-
Publication No.: US07986012B2Publication Date: 2011-07-26
- Inventor: Yoshihisa Matsubara , Takashi Sakoh
- Applicant: Yoshihisa Matsubara , Takashi Sakoh
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-332717 20071225
- Main IPC: H01L21/71
- IPC: H01L21/71
Abstract:
A semiconductor device 100 includes a first gate 210, which is formed using a gate last process. The first gate 210 includes a gate insulating film formed in a bottom surface in a first concave portion formed in the insulating film; a gate electrode formed over the gate insulating film in the first concave portion; and a protective insulating film 140 formed on the gate electrode in the first concave portion. In addition, the semiconductor device 100 includes a contact 134, which is coupled to the N-type impurity-diffused region 116a in the both sides of the first gate 210 and is buried in the second concave portion having a diameter that is large than the first concave portion.
Public/Granted literature
- US20090159978A1 SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING SAME Public/Granted day:2009-06-25
Information query
IPC分类:
