Invention Grant
- Patent Title: Solid-state imaging device and its manufacturing method
- Patent Title (中): 固态成像装置及其制造方法
-
Application No.: US12400447Application Date: 2009-03-09
-
Publication No.: US07986019B2Publication Date: 2011-07-26
- Inventor: Yoshihiro Matsushita
- Applicant: Yoshihiro Matsushita
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-059434 20080310
- Main IPC: H01L31/0232
- IPC: H01L31/0232
Abstract:
A solid-state imaging device includes a semiconductor substrate having a photoelectric conversion region, a first microlens provided above the semiconductor substrate, covering the photoelectric conversion region, and having a convex upper surface, for gathering external light into the photoelectric conversion region, and a second microlens provided above the first microlens and having a convex upper surface, for gathering external light into the first microlens. A flat surface is provided at a top portion of one of the first and second microlenses and immediately above the photoelectric conversion region.
Public/Granted literature
- US20090224348A1 SOLID-STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD Public/Granted day:2009-09-10
Information query
IPC分类:
