Invention Grant
- Patent Title: Encapsulated metal resistor
- Patent Title (中): 封装金属电阻
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Application No.: US11584117Application Date: 2006-10-20
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Publication No.: US07986027B2Publication Date: 2011-07-26
- Inventor: Eamon Hynes , William A. Lane , Bernard Stenson
- Applicant: Eamon Hynes , William A. Lane , Bernard Stenson
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
The method provides a semiconductor structure and method for forming such a structure that provides for protection for resistive layers formed within the structure from contamination from adjacent layers. By encapsulating the resistive layer in a material that is resistant to the diffusion of contaminants it is possible to protect the resistive material during the processing required to manufacture the structure.
Public/Granted literature
- US20080094168A1 Encapsulated metal resistor Public/Granted day:2008-04-24
Information query
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