Invention Grant
- Patent Title: Low noise semiconductor device
- Patent Title (中): 低噪声半导体器件
-
Application No.: US12068606Application Date: 2008-02-08
-
Publication No.: US07986037B2Publication Date: 2011-07-26
- Inventor: Yutaka Uematsu , Tatsuya Saito , Hideki Osaka , Yoji Nishio , Shunichi Saito
- Applicant: Yutaka Uematsu , Tatsuya Saito , Hideki Osaka , Yoji Nishio , Shunichi Saito
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Hitachi, Ltd.,Elpida Memory, Inc.
- Current Assignee: Hitachi, Ltd.,Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Stites & Harbison PLLC
- Agent Juan Carlos A. Marquez, Esq.
- Priority: JP2007-066900 20070315
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
As a power feed route in a semiconductor chip, a power feed route which reduces antiresonance impedance in the frequency range of tens of MHz is to be realized thereby to suppress power noise in a semiconductor device. By inserting structures which raise the resistance in the medium frequency band into parts where the resistance is intrinsically high, such as power wiring in a semiconductor package and capacitor interconnecting electrode parts, the antiresonance impedance in the medium frequency band can be effectively reduced while keeping the impedance low at the low frequency.
Public/Granted literature
- US20080290495A1 Low noise semiconductor device Public/Granted day:2008-11-27
Information query
IPC分类: