Invention Grant
- Patent Title: Semiconductor module and method of producing the same
- Patent Title (中): 半导体模块及其制造方法
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Application No.: US12392312Application Date: 2009-02-25
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Publication No.: US07986046B2Publication Date: 2011-07-26
- Inventor: Akihito Narita , Naoya Sato
- Applicant: Akihito Narita , Naoya Sato
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2008-051969 20080303
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52

Abstract:
A semiconductor module including: a semiconductor chip in which an integrated circuit is formed; an electrode formed on the semiconductor chip and electrically connected to the integrated circuit; an insulating film formed on the semiconductor chip and having an opening positioned corresponding to the electrode; an elastic protrusion disposed on the insulating film, a surface of the elastic protrusion opposite to the insulating film being convexly curved; an interconnect extending from over the electrode to over the elastic protrusion; an elastic substrate on which a lead is formed, the lead being in contact with part of the interconnect positioned on the elastic protrusion; and an adhesive maintaining a space between a surface of the semiconductor chip on which the elastic protrusion is formed and a surface of the elastic substrate on which the lead is formed. The elastic substrate has a first depression formed by elastic deformation. The lead is in contact with the interconnect on a surface of the first depression.
Public/Granted literature
- US20090218685A1 SEMICONDUCTOR MODULE AND METHOD OF PRODUCING THE SAME Public/Granted day:2009-09-03
Information query
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