Invention Grant
- Patent Title: Mixed-voltage I/O buffer
- Patent Title (中): 混合电压I / O缓冲器
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Application No.: US12289132Application Date: 2008-10-21
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Publication No.: US07986171B2Publication Date: 2011-07-26
- Inventor: Chua-Chin Wang , Wei-Chih Chang , Tzung-Je Lee , Kuo-Chan Huang
- Applicant: Chua-Chin Wang , Wei-Chih Chang , Tzung-Je Lee , Kuo-Chan Huang
- Applicant Address: TW Tainan County TW Kaohsiung
- Assignee: Himax Technologies Limited,National Sun Yat-Sen University
- Current Assignee: Himax Technologies Limited,National Sun Yat-Sen University
- Current Assignee Address: TW Tainan County TW Kaohsiung
- Agency: Rabin & Berdo, P.C.
- Main IPC: H03B1/00
- IPC: H03B1/00

Abstract:
A mixed-voltage input/output (I/O) buffer includes an output buffer circuit. The output buffer circuit includes an output stage circuit, a gate-tracking circuit and a floating N-well circuit. The output stage circuit includes stacked pull-up P-type transistors and stacked pull-down N-type transistors, in which a first P-type transistor of the stacked pull-up P-type transistors and a first N-type transistor of the stacked pull-down N-type transistors are coupled to an I/O pad. The gate-tracking circuit controls gate voltage of the first P-type transistor in accordance with a voltage of the I/O pad to prevent leakage current. The floating N-well circuit provides N-well voltages for an N-well of the first P-type transistor and an N-well of a second P-type transistor, controlling gate voltage of the first P-type transistor, of the gate-tracking circuit to prevent leakage current.
Public/Granted literature
- US20100097117A1 Mixed-voltage I/O buffer Public/Granted day:2010-04-22
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