Invention Grant
- Patent Title: Immersion lithography apparatus and methods
- Patent Title (中): 浸渍光刻设备及方法
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Application No.: US11427421Application Date: 2006-06-29
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Publication No.: US07986395B2Publication Date: 2011-07-26
- Inventor: Ching-Yu Chang , Burn Jeng Lin , Chin-Hsiang Lin
- Applicant: Ching-Yu Chang , Burn Jeng Lin , Chin-Hsiang Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03B27/42
- IPC: G03B27/42
Abstract:
A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography apparatus. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof.
Public/Granted literature
- US20070091287A1 IMMERSION LITHOGRAPHY APPARATUS AND METHODS Public/Granted day:2007-04-26
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