Invention Grant
- Patent Title: Analog access circuit for validating chalcogenide memory cells
- Patent Title (中): 用于验证硫族化物记忆单元的模拟访问电路
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Application No.: US12525510Application Date: 2008-11-26
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Publication No.: US07986550B2Publication Date: 2011-07-26
- Inventor: Bin Li , Adam Matthew Bumgarner
- Applicant: Bin Li , Adam Matthew Bumgarner
- Applicant Address: US NH Nashua US MI Rochester Hills
- Assignee: BAE Systems Information and Electronics Systems Integration Inc.,Ovonyx, Inc.
- Current Assignee: BAE Systems Information and Electronics Systems Integration Inc.,Ovonyx, Inc.
- Current Assignee Address: US NH Nashua US MI Rochester Hills
- Agency: Dillon & Yudell LLP
- Agent Anthony Ng; Daniel J. Long
- International Application: PCT/US2008/084784 WO 20081126
- International Announcement: WO2009/070635 WO 20090604
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
An analog access circuit for characterizing chalcogenide memory cells is disclosed. The analog access circuit includes an analog access control module, an address and data control module, and an analog cell access and current monitoring module. The analog access control module selectively controls whether a normal memory access or an analog memory access should be performed on a specific chalcogenide memory cell. The address and data control module allows a normal memory access to the chalcogenide memory cell according to an input address. The analog cell access and current monitoring module performs an analog memory access to the chalcogenide memory cell according to the input address, and monitors a reference current from a sense amplifier associated with the chalcogenide memory cell.
Public/Granted literature
- US20100074000A1 Analog Access Circuit for Validating Chalcogenide Memory Cells Public/Granted day:2010-03-25
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