Invention Grant
US07986558B2 Method of operating non-volatile memory cell and memory device utilizing the method
有权
使用该方法操作非易失性存储单元和存储器件的方法
- Patent Title: Method of operating non-volatile memory cell and memory device utilizing the method
- Patent Title (中): 使用该方法操作非易失性存储单元和存储器件的方法
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Application No.: US12326283Application Date: 2008-12-02
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Publication No.: US07986558B2Publication Date: 2011-07-26
- Inventor: Chao-I Wu
- Applicant: Chao-I Wu
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method of operating a non-volatile memory cell is described, including pre-erasing the cell through double-side biased (DSB) injection of a first type of carrier and programming the cell through Fowler-Nordheim (FN) tunneling of a second type of carrier.
Public/Granted literature
- US20100135086A1 METHOD OF OPERATING NON-VOLATILE MEMORY CELL AND MEMORY DEVICE UTILIZING THE METHOD Public/Granted day:2010-06-03
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