Invention Grant
US07986573B2 Programming memory with direct bit line driving to reduce channel-to-floating gate coupling 有权
使用直接位线驱动来编程存储器,以减少通道到浮置栅极耦合

Programming memory with direct bit line driving to reduce channel-to-floating gate coupling
Abstract:
During programming of storage elements, channel-to-floating gate coupling effects are compensated to avoid increased programming speed and threshold voltage distribution widening. In connection with a programming iteration, unselected bit lines voltages are stepped up to induce coupling to selected bit lines. Dedicated power supplies can be used to provide the step up to avoid a risk that the unselected bit lines begin floating due to pre-charging of other bit lines The selected bit lines are coupled higher as a function of their proximity to unselected bit lines, and in preparation for applying a program pulse. Coupling may be used for slow and fast programming modes. A dedicated power supply can be provided for driving slow programming mode bit lines at a level which provides coupling compensation.
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