Invention Grant
US07986579B2 Memory device and method thereof 有权
存储器件及其方法

  • Patent Title: Memory device and method thereof
  • Patent Title (中): 存储器件及其方法
  • Application No.: US12030485
    Application Date: 2008-02-13
  • Publication No.: US07986579B2
    Publication Date: 2011-07-26
  • Inventor: Takao Akaogi
  • Applicant: Takao Akaogi
  • Applicant Address: US CA Sunnyvale
  • Assignee: Spansion LLC
  • Current Assignee: Spansion LLC
  • Current Assignee Address: US CA Sunnyvale
  • Main IPC: G11C7/04
  • IPC: G11C7/04
Memory device and method thereof
Abstract:
A device, and corresponding method, includes a temperature dependent bias generator to generate a voltage that is applied to a control gate of a sense amplifier. By applying the temperature dependent bias signal to the sense amplifier, a substantially temperature independent discharge time can be achieved at a sense node of a sense amplifier.
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