Invention Grant
- Patent Title: Memory device and method thereof
- Patent Title (中): 存储器件及其方法
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Application No.: US12030485Application Date: 2008-02-13
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Publication No.: US07986579B2Publication Date: 2011-07-26
- Inventor: Takao Akaogi
- Applicant: Takao Akaogi
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C7/04
- IPC: G11C7/04

Abstract:
A device, and corresponding method, includes a temperature dependent bias generator to generate a voltage that is applied to a control gate of a sense amplifier. By applying the temperature dependent bias signal to the sense amplifier, a substantially temperature independent discharge time can be achieved at a sense node of a sense amplifier.
Public/Granted literature
- US20090201724A1 MEMORY DEVICE AND METHOD THEREOF Public/Granted day:2009-08-13
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