Invention Grant
- Patent Title: Semiconductor memory device including reset control circuit
- Patent Title (中): 半导体存储器件包括复位控制电路
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Application No.: US12715146Application Date: 2010-03-01
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Publication No.: US07986581B2Publication Date: 2011-07-26
- Inventor: Chang-Ho Do , Yong-Ki Kim
- Applicant: Chang-Ho Do , Yong-Ki Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR2005-0090914 20050929; KR2006-0049002 20060530
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A semiconductor memory device for use in a system includes a reset signal generator for generating a reset entry signal and a reset exit signal respectively in response to a start timing and a termination timing of a reset operation of the system; and a reset controller for performing a precharge operation in response to the reset entry signal and a refresh operation in response to the reset exit signal.
Public/Granted literature
- US20100149891A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING RESET CONTROL CIRCUIT Public/Granted day:2010-06-17
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