Invention Grant
- Patent Title: Processing multilayer semiconductors with multiple heat sources
- Patent Title (中): 加工具有多个热源的多层半导体
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Application No.: US12212487Application Date: 2008-09-17
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Publication No.: US07986871B2Publication Date: 2011-07-26
- Inventor: Sundar Ramamurthy , Andreas G. Hegedus , Randhir Thakur
- Applicant: Sundar Ramamurthy , Andreas G. Hegedus , Randhir Thakur
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: A21B2/00
- IPC: A21B2/00
Abstract:
A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.
Public/Granted literature
- US20090010626A1 PROCESSING MULTILAYER SEMICONDUCTORS WITH MULTIPLE HEAT SOURCES Public/Granted day:2009-01-08
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