Invention Grant
- Patent Title: Control device of substrate processing apparatus and control program therefor
- Patent Title (中): 基板处理装置的控制装置及其控制程序
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Application No.: US12187956Application Date: 2008-08-07
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Publication No.: US07987012B2Publication Date: 2011-07-26
- Inventor: Daisuke Morisawa , Masayuki Hirose
- Applicant: Daisuke Morisawa , Masayuki Hirose
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-029327 20060207
- Main IPC: G06F19/00
- IPC: G06F19/00 ; G06F7/00 ; H01L21/66 ; H01L21/00

Abstract:
A control device is provided that flexibly controls a substrate processing apparatus for each product process. Four process recipes PM 1 to PM 4 are stored in a first storage unit 255a. Corresponding to each of the process recipes, a high temperature, a medium temperature, and a low temperature pre-recipe are stored in a second storage unit 255b. A process recipe determination unit 260 determines, in response to a recipe specified by the operator, a process recipe corresponding to the specified recipe from the first storage unit 255a. A stage temperature acquisition unit 265 acquires, from the determined process recipe, a stage temperature. A pre-recipe selection unit 270 selects, from the three types of pre-recipes stored in the second storage unit 255b, one pre-recipe corresponding to the stage temperature. Before the wafer W is deposition-processed, therefore, the PM may be well-conditioned according to the selected pre-recipe.
Public/Granted literature
- US20080306615A1 CONTROL DEVICE OF SUBSTRATE PROCESSING APPARATUS AND CONTROL PROGRAM THEREFOR Public/Granted day:2008-12-11
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