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US07987085B2 Method of accurate prediction of electrostatic discharge (ESD) performance in multi-voltage environment 有权
在多电压环境下精确预测静电放电（ESD）性能的方法

  • Patent Title: Method of accurate prediction of electrostatic discharge (ESD) performance in multi-voltage environment
  • Patent Title (中): 在多电压环境下精确预测静电放电（ESD）性能的方法
  • Application No.: US12032624
    Application Date: 2008-02-15
  • Publication No.: US07987085B2
    Publication Date: 2011-07-26
  • Inventor: S. M. Sohel Imtiaz
  • Applicant: S. M. Sohel Imtiaz
  • Applicant Address: US CA San Jose
  • Assignee: Micrel, Inc.
  • Current Assignee: Micrel, Inc.
  • Current Assignee Address: US CA San Jose
  • Agency: Sawyer Law Group, P.C.
  • Main IPC: G06F17/50
  • IPC: G06F17/50
Method of accurate prediction of electrostatic discharge (ESD) performance in multi-voltage environment
Abstract:
The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to predictive, pre-fabrication methodologies for determining inefficiencies in an integrated circuit (IC) design. The present invention, in one or more implementations, provides an effective pre-production methodology for predicting the efficiency and behavior of a designed ESD protective circuit and testing the ESD protective circuit with a simulated IC. The method of the present invention yields predictive results that have been comparatively tested.
Abstract(Chinese):

本发明一般涉及半导体晶片制造，更具体地但非排他地涉及用于确定集成电路（IC）设计中的低效率的预制的预制方法。 本发明在一个或多个实施方式中提供了用于预测设计的ESD保护电路的效率和行为以及用模拟IC测试ESD保护电路的有效预生产方法。 本发明的方法产生了相对测试的预测结果。

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