Invention Grant
US07987316B2 Programming device for non-volatile memory and programming method thereof
有权
非易失性存储器的编程装置及其编程方法
- Patent Title: Programming device for non-volatile memory and programming method thereof
- Patent Title (中): 非易失性存储器的编程装置及其编程方法
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Application No.: US12068587Application Date: 2008-02-08
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Publication No.: US07987316B2Publication Date: 2011-07-26
- Inventor: Hsiang-Hsiung Yu , Yu-An Chang
- Applicant: Hsiang-Hsiung Yu , Yu-An Chang
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: Bacon & Thomas, PLLC
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
The invention presents a programming method for a non-volatile memory with a bit signal to be programmed unidirectionally. The method includes the steps of a) providing first data each having a first number of sequential bits of first status in a data page in a non-volatile memory, b) decoding the first number of sequential bits of the first status in the first data into a second number of sequential bits of second status, and c) programming second data in a portion of the data page where the first status has been decoded to the second status.
Public/Granted literature
- US20090204745A1 Programming device for non-volatile memory and programming method thereof Public/Granted day:2009-08-13
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