Invention Grant
- Patent Title: Multilayer three-dimensional circuit structure and manufacturing method thereof
- Patent Title (中): 多层三维电路结构及其制造方法
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Application No.: US12333014Application Date: 2008-12-11
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Publication No.: US07987589B2Publication Date: 2011-08-02
- Inventor: Han-Pei Huang , Cheng-Hung Yu
- Applicant: Han-Pei Huang , Cheng-Hung Yu
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: J.C. Patents
- Priority: TW97139189A 20081013
- Main IPC: H05K3/02
- IPC: H05K3/02

Abstract:
A multilayer three-dimensional circuit structure and a manufacturing method thereof are provided in the present invention. The manufacturing method includes following steps. First, a three-dimensional insulating structure is provided. A first three-dimensional circuit structure is then formed on a surface of the three-dimensional insulating structure. Next, an insulating layer covering the first three-dimensional circuit structure is formed. Thereafter, a second three-dimensional circuit structure is formed on the insulating layer. Subsequently, at least a conductive via penetrating the insulating layer is formed for electrically connecting the second three-dimensional circuit structure and the first three-dimensional circuit structure.
Public/Granted literature
- US20100089627A1 MULTILAYER THREE-DIMENSIONAL CIRCUIT STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-04-15
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