Invention Grant
US07988062B2 Temperature control device for target substrate, temperature control method and plasma processing apparatus including same
有权
目标基板用温度控制装置,温度控制方法及包括其的等离子体处理装置
- Patent Title: Temperature control device for target substrate, temperature control method and plasma processing apparatus including same
- Patent Title (中): 目标基板用温度控制装置,温度控制方法及包括其的等离子体处理装置
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Application No.: US12261341Application Date: 2008-10-30
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Publication No.: US07988062B2Publication Date: 2011-08-02
- Inventor: Ryo Nonaka , Koichi Murakami
- Applicant: Ryo Nonaka , Koichi Murakami
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-285823 20071102
- Main IPC: G05D23/00
- IPC: G05D23/00 ; H01L21/306

Abstract:
A temperature control device for a target substrate includes a mounting table having temperature control members respectively provided in temperature systems to control temperatures of regions of the target substrate to respective predetermined temperature levels; circulation channels through which fluids passing through the temperature control members flow; and heating channels each for flowing therein a heated fluid having a higher temperature compared to the fluids circulating in the circulation channels. The device further includes cooling channels each for flowing therein a cooled fluid having a lower temperature compared to the fluids circulating in the circulation channels; and joining units that join the circulation channels to build the respective temperature control systems, the joining units having flow rate control units that controls flow rate ratios of the fluids supplied from the respective channels to the temperature control members.
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