Invention Grant
US07988814B2 Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
有权
等离子体处理装置，等离子体处理方法，聚焦环和聚焦环组件
- Patent Title: Plasma processing apparatus, plasma processing method, focus ring, and focus ring component
- Patent Title (中): 等离子体处理装置，等离子体处理方法，聚焦环和聚焦环组件
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Application No.: US11685308Application Date: 2007-03-13
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Publication No.: US07988814B2Publication Date: 2011-08-02
- Inventor: Akira Koshiishi
- Applicant: Akira Koshiishi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-074372 20060317
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; C23C16/00
Abstract:
When a substrate to be processed placed on a mounting table disposed in a process chamber is processed by plasma generated in the process chamber by application of high-frequency voltage, an electric field causing ions generated by the plasma to accelerate toward a lower surface of a peripheral edge portion of the substrate to be processed placed on the mounting table is formed under the peripheral edge portion of the substrate to be processed, and the ions consequently collide with the lower surface of the peripheral edge portion, which reduces the occurrence of deposition.
Public/Granted literature
- US20070215279A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, FOCUS RING, AND FOCUS RING COMPONENT Public/Granted day:2007-09-20
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