A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.