Invention Grant
US07989123B2 Photomask including ion trapping layer and method of manufacturing semiconductor device using the photomask
有权
包括离子捕获层的光掩模和使用光掩模制造半导体器件的方法
- Patent Title: Photomask including ion trapping layer and method of manufacturing semiconductor device using the photomask
- Patent Title (中): 包括离子捕获层的光掩模和使用光掩模制造半导体器件的方法
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Application No.: US12456500Application Date: 2009-06-17
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Publication No.: US07989123B2Publication Date: 2011-08-02
- Inventor: Han-shin Lee , Jae-hyuck Choi , Hae-young Jeong , Hyung-ho Ko , Jin-sik Jung , Jong-keun Oh , Soo-jung Kang
- Applicant: Han-shin Lee , Jae-hyuck Choi , Hae-young Jeong , Hyung-ho Ko , Jin-sik Jung , Jong-keun Oh , Soo-jung Kang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2008-0091615 20080918
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A photomask includes an ion trapping layer and a method of manufacturing a semiconductor device uses the photomask. The photomask includes a transparent substrate and an ion trapping layer formed on a first region of the transparent substrate to trap ions present near the transparent substrate. In manufacturing a semiconductor device, a photosensitive film formed on a substrate is exposed through the photomask in which the ion trapping layer is formed on the transparent substrate, and the substrate is processed using the photosensitive film obtained as the result of the exposure.
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