Invention Grant
- Patent Title: Photo-masking method for fabricating TFT array substrate
- Patent Title (中): 用于制造TFT阵列基板的光掩模方法
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Application No.: US11725700Application Date: 2007-03-19
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Publication No.: US07989142B2Publication Date: 2011-08-02
- Inventor: Jian-Jhong Fu
- Applicant: Jian-Jhong Fu
- Applicant Address: TW Miao-Li County
- Assignee: Chimel Innolux Corporation
- Current Assignee: Chimel Innolux Corporation
- Current Assignee Address: TW Miao-Li County
- Agent Wei Te Chung
- Priority: TW95109292A 20060317
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/02

Abstract:
An exemplary method for fabricating a TFT array substrate includes providing an insulating substrate (201); coating a gate metal layer (202) on the substrate; forming a plurality of gate electrodes (212) using a first photo-mask process; forming a gate insulating layer (203), a semiconducting layer (205), and a source/drain metal layer (206) on the substrate having the gate electrodes; forming a plurality of source electrodes (217) and a plurality of drain electrodes (218) using a second photo-mask process; forming a passivation material layer (209) and a photo resist layer on the gate insulating layer, the source electrodes and the drain electrodes; forming a passivation layer (219) and the photo resist pattern (234) using a third photo-mask process; forming a transparent conductive metal layer (204) on the photo resist pattern, the drain electrode and the gate insulating layer; and forming a pixel electrode (214) through removing the photo resist pattern.
Public/Granted literature
- US20070218581A1 Photo-masking method for fabricating TFT array substrate Public/Granted day:2007-09-20
Information query
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