Invention Grant
US07989253B2 Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device
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形成光刻用掩模的方法，形成用于光刻的掩模数据的方法，背照式固态成像器件的制造方法，背照式固态成像器件和电子器件
- Patent Title: Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing back-illuminated solid-state imaging device, back-illuminated solid-state imaging device and electronic device
- Patent Title (中): 形成光刻用掩模的方法，形成用于光刻的掩模数据的方法，背照式固态成像器件的制造方法，背照式固态成像器件和电子器件
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Application No.: US12395948Application Date: 2009-03-02
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Publication No.: US07989253B2Publication Date: 2011-08-02
- Inventor: Keiji Mabuchi
- Applicant: Keiji Mabuchi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-080008 20080326
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals are reversed, when forming the mask for lithography used for manufacturing a back-illuminated solid-state imaging device which takes incident light from the side of a surface opposite to the side of a surface on which wiring of a device region in which photoelectric conversion elements are formed is formed.
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