Invention Grant
US07989260B2 Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor device using the same
有权
在金刚石表面上选择性地形成原子平面的方法，通过该方法制备的金刚石衬底以及使用其的半导体器件
- Patent Title: Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor device using the same
- Patent Title (中): 在金刚石表面上选择性地形成原子平面的方法，通过该方法制备的金刚石衬底以及使用其的半导体器件
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Application No.: US12227163Application Date: 2007-04-23
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Publication No.: US07989260B2Publication Date: 2011-08-02
- Inventor: Norio Tokuda , Hitoshi Umezawa , Satoshi Yamasaki
- Applicant: Norio Tokuda , Hitoshi Umezawa , Satoshi Yamasaki
- Applicant Address: JP Tokyo
- Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee: National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2006-132145 20060511
- International Application: PCT/JP2007/058754 WO 20070423
- International Announcement: WO2007/132644 WO 20071122
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface.A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.
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