Invention Grant
- Patent Title: Fabricating a gallium nitride device with a diamond layer
- Patent Title (中): 用金刚石层制造氮化镓器件
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Application No.: US12341115Application Date: 2008-12-22
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Publication No.: US07989261B2Publication Date: 2011-08-02
- Inventor: Ralph Korenstein , Steven D. Bernstein , Stephen J. Pereira
- Applicant: Ralph Korenstein , Steven D. Bernstein , Stephen J. Pereira
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.In another aspect, a device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.
Public/Granted literature
- US20100155900A1 FABRICATING A GALLIUM NITRIDE DEVICE WITH A DIAMOND LAYER Public/Granted day:2010-06-24
Information query
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