Invention Grant
US07989277B1 Integrated structure with transistors and Schottky diodes and process for fabricating the same
有权
具有晶体管和肖特基二极管的集成结构及其制造方法
- Patent Title: Integrated structure with transistors and Schottky diodes and process for fabricating the same
- Patent Title (中): 具有晶体管和肖特基二极管的集成结构及其制造方法
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Application No.: US11853694Application Date: 2007-09-11
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Publication No.: US07989277B1Publication Date: 2011-08-02
- Inventor: Louis Luh , Keh-Chung Wang , Wah S. Wong , Miroslav Micovic , David Chow , Don Hitko
- Applicant: Louis Luh , Keh-Chung Wang , Wah S. Wong , Miroslav Micovic , David Chow , Don Hitko
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting structure, are disclosed. Integration of vertical junction Schottky diodes is enabled, and the parasitic capacitance and resistance as well as the physical size of the diode are minimized. A process for fabricating an integrated group III nitride structure comprising double-heterostructure field effect transistors (DHFETs) and Schottky diodes and the resulting structure are also disclosed.
Information query
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