Method for fabricating storage node electrode in semiconductor device

Invention Grant

US07989287B2 Method for fabricating storage node electrode in semiconductor device 有权

Title translation: 在半导体器件中制造存储节点电极的方法

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Patent Title: Method for fabricating storage node electrode in semiconductor device
Patent Title (中): 在半导体器件中制造存储节点电极的方法
Application No.: US12834135

Application Date: 2010-07-12
Publication No.: US07989287B2

Publication Date: 2011-08-02
Inventor: Byung Soo Eun
Applicant: Byung Soo Eun
Applicant Address: KR Gyeonggi-do
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Gyeonggi-do
Agency: Ladas & Parry LLP
Priority: KR10-2009-0086648 20090914
Main IPC: H01L21/8242
IPC: H01L21/8242

Method for fabricating storage node electrode in semiconductor device

Abstract:

A method for fabricating a storage node electrode in a semiconductor device includes: performing a primary high density plasma (HDP) process to form a first HDP oxide film over an etch stop film; performing a secondary HDP process to form a second HDP oxide film on the first HDP oxide film; forming a support film over the second HDP oxide film; performing a tertiary HDP process to form a third HDP oxide film over the support film; forming a storage node electrode on an exposed surface of the storage node contact hole; partially removing the third HDP oxide film and the support film so that a support pattern supporting the storage node electrode is formed; and exposing an outer surface of the storage node electrode by removing the second HDP oxide film and the first HDP oxide film.

Abstract(Chinese):

一种在半导体器件中制造存储节点电极的方法包括：执行初级高密度等离子体（HDP）工艺以在蚀刻停止膜上形成第一HDP氧化物膜; 执行二次HDP工艺以在第一HDP氧化物膜上形成第二HDP氧化物膜; 在所述第二HDP氧化物膜上形成支撑膜; 执行三次HDP处理以在支撑膜上形成第三HDP氧化物膜; 在所述存储节点接触孔的暴露表面上形成存储节点电极; 部分地去除第三HDP氧化物膜和支撑膜，从而形成支撑存储节点电极的支撑图案; 并且通过去除第二HDP氧化物膜和第一HDP氧化物膜来暴露存储节点电极的外表面。

Public/Granted literature

US20110065251A1 METHOD FOR FABRICATING STORAGE NODE ELECTRODE IN SEMICONDUCTOR DEVICE Public/Granted day:2011-03-17

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）