Invention Grant
- Patent Title: Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps
- Patent Title (中): 用于形成铑基电荷阱的方法和包括铑基电荷阱的装置
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Application No.: US12408920Application Date: 2009-03-23
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Publication No.: US07989290B2Publication Date: 2011-08-02
- Inventor: Eugene P. Marsh , Brenda D Kraus
- Applicant: Eugene P. Marsh , Brenda D Kraus
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge traps in electronic structures for use in a wide range of electronic devices and systems. In an embodiment, conductive nanoparticles are deposited on a dielectric layer by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles to configure the conductive nanoparticles as charge traps.
Public/Granted literature
- US20090173991A1 METHODS FOR FORMING RHODIUM-BASED CHARGE TRAPS AND APPARATUS INCLUDING RHODIUM-BASED CHARGE TRAPS Public/Granted day:2009-07-09
Information query
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