Invention Grant
US07989328B2 Resistive memory array using P-I-N diode select device and methods of fabrication thereof
有权
使用P-I-N二极管选择装置的电阻式存储器阵列及其制造方法
- Patent Title: Resistive memory array using P-I-N diode select device and methods of fabrication thereof
- Patent Title (中): 使用P-I-N二极管选择装置的电阻式存储器阵列及其制造方法
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Application No.: US11641646Application Date: 2006-12-19
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Publication No.: US07989328B2Publication Date: 2011-08-02
- Inventor: Seungmoo Choi , Sameer Haddad
- Applicant: Seungmoo Choi , Sameer Haddad
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: H01L21/38
- IPC: H01L21/38
Abstract:
An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device-P-I-N diode structures.
Public/Granted literature
- US20080144354A1 Resistive memory array using P-I-N diode select device and methods of fabrication thereof Public/Granted day:2008-06-19
Information query
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