Invention Grant
- Patent Title: Method for forming a nickelsilicide FUSI gate
- Patent Title (中): 形成镍硅化物FUSI浇口的方法
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Application No.: US12037486Application Date: 2008-02-26
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Publication No.: US07989344B2Publication Date: 2011-08-02
- Inventor: Jorge Adrian Kittl
- Applicant: Jorge Adrian Kittl
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and negligible work function shifts with dopants on SiO2. Formation of Ni3Si2 can applied for applications targeting NiSi FUSI gates, thereby expanding the process window without changing the electrical properties of the FUSI gate.
Public/Granted literature
- US20090001483A1 Method for Forming a Nickelsilicide FUSI Gate Public/Granted day:2009-01-01
Information query
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