A method of forming a resist pattern on a silicon semiconductor substrate having an anti-reflective layer thereon is described. The method includes the steps of a) modifying surface energy of the anti-reflective surface with a chemical treatment composition, b) applying a UV etch resist to the treated anti-reflective surface, and c) exposing the anti-reflective surface to a wet chemical etchant composition to remove exposed areas of the anti-reflective surface. Thereafter, the substrate can be metallized to provide a conductor pattern. The method may be used to produce silicon solar cells.