Invention Grant
- Patent Title: Process for filling recessed features in a dielectric substrate
- Patent Title (中): 用于在电介质基板中填充凹陷特征的工艺
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Application No.: US12295465Application Date: 2006-03-30
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Publication No.: US07989347B2Publication Date: 2011-08-02
- Inventor: John C. Flake
- Applicant: John C. Flake
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/EP2006/003970 WO 20060330
- International Announcement: WO2007/112768 WO 20071011
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A process for filling recessed features of a dielectric substrate for a semiconductor device, comprises the steps (a) providing a dielectric substrate having a recessed feature in a surface thereof, wherein the smallest dimension (width) across said feature is less than ≦200 nm, a conductive layer being present on at least a portion of said surface, (b) filling said recessed feature with a conductive material, and (c) prior to filling said recessed feature with said conductive material, treating said surface with an accelerator.
Public/Granted literature
- US20090170306A1 PROCESS FOR FILLING RECESSED FEATURES IN A DIELECTRIC SUBSTRATE Public/Granted day:2009-07-02
Information query
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