Invention Grant
US07989789B2 Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material
有权
相变存储器件，其通过改变存储器材料的状态以非易失性方式存储信息
- Patent Title: Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material
- Patent Title (中): 相变存储器件，其通过改变存储器材料的状态以非易失性方式存储信息
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Application No.: US10507475Application Date: 2003-01-10
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Publication No.: US07989789B2Publication Date: 2011-08-02
- Inventor: Haruki Toda
- Applicant: Haruki Toda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2002-102640 20020404
- International Application: PCT/JP03/00155 WO 20030110
- International Announcement: WO03/085675 WO 20031016
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A phase-change memory device has a plurality of first wiring lines WL extending in parallel to each other, a plurality of second wiring lines BL which are disposed to cross the first wiring lines WL while being separated or isolated therefrom, and memory cells MC which are disposed at respective cross points of the first wiring lines WL and the second wiring lines BL and each of which has one end connected to a first wiring line WL and the other end connected to a second wiring line BL. The memory cell MC has a variable resistive element VR which stores as information a resistance value determined due to phase change between crystalline and amorphous states thereof, and a Schottky diode SD which is connected in series to the variable resistive element VR.
Public/Granted literature
- US20080258129A1 Phase-Change Memory Device Public/Granted day:2008-10-23
Information query
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