Invention Grant
- Patent Title: Nanowire field effect junction diode
- Patent Title (中): 纳米线场效应结二极管
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Application No.: US12578676Application Date: 2009-10-14
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Publication No.: US07989800B2Publication Date: 2011-08-02
- Inventor: Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
- Applicant: Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
- Applicant Address: US VA Fairfax
- Assignee: George Mason Intellectual Properties, Inc.
- Current Assignee: George Mason Intellectual Properties, Inc.
- Current Assignee Address: US VA Fairfax
- Agent David Grossman
- Main IPC: H01L31/09
- IPC: H01L31/09

Abstract:
A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.
Public/Granted literature
- US20100090198A1 Nanowire Field Effect Junction Diode Public/Granted day:2010-04-15
Information query
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