A semiconductor device on a flexible substrate includes a semiconductor layer constituting a plurality of bottom-gate thin-film transistors, first wiring lines, second wiring lines, a first insulating layer, and a gate insulating film. The first insulating layer and the gate insulating film are present below the semiconductor layer, the first wiring lines, and the second wiring lines and are partially removed in regions where the semiconductor layer, the first wiring lines, and the second wiring lines are not disposed.