Invention Grant
- Patent Title: Method of forming a dielectric layer on a semiconductor light emitting device
- Patent Title (中): 在半导体发光器件上形成电介质层的方法
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Application No.: US12766221Application Date: 2010-04-23
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Publication No.: US07989824B2Publication Date: 2011-08-02
- Inventor: Rafael I. Aldaz , James G. Neff
- Applicant: Rafael I. Aldaz , James G. Neff
- Applicant Address: NL Eindhoven US CA San Jose
- Assignee: Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company, LLC
- Current Assignee: Koninklijke Philips Electronics N.V.,Philips Lumileds Lighting Company, LLC
- Current Assignee Address: NL Eindhoven US CA San Jose
- Main IPC: H01L33/38
- IPC: H01L33/38
Abstract:
A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material
Public/Granted literature
- US20100308367A1 METHOD OF FORMING A DIELECTRIC LAYER ON A SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2010-12-09
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