A method produces a semiconductor by conducting superimposed doping of a plurality of dopants in a semiconductor substrate, which includes evaporating a (2×n) structure by a first dopant and forming its thin line structure on the substrate, then bringing the semiconductor substrate to a temperature capable of epitaxial growth, vapor depositing a second or third or subsequent dopants above the semiconductor substrate where the first dopant has been deposited, then epitaxially growing a semiconductor crystal layer over the semiconductor substrate, subsequently forming a superimposed doping layer composed of the first, second, or the third or subsequent dopants in the semiconductor substrate, and applying an annealing treatment to the superimposed doping layer at a high temperature, thereby activating the plurality of dopants electrically or optically. Superimposed doping of a plurality kinds of elements as dopants is performed to a predetermined depth in the case of an elemental semiconductor.