Invention Grant
- Patent Title: Integrated circuits and interconnect structure for integrated circuits
- Patent Title (中): 用于集成电路的集成电路和互连结构
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Application No.: US12156196Application Date: 2008-05-30
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Publication No.: US07989852B2Publication Date: 2011-08-02
- Inventor: Sehat Sutardja
- Applicant: Sehat Sutardja
- Applicant Address: BB St. Michael
- Assignee: Marvell World Trade Ltd.
- Current Assignee: Marvell World Trade Ltd.
- Current Assignee Address: BB St. Michael
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
An integrated circuit includes N plane-like metal layers. A first plane-like metal layer includes M contact portions that communicate with the N plane-like metal layers, respectively. The first plane-like metal layer and the N plane-like metal layers are located separate planes. First and second drain regions have a symmetric shape across at least one of horizontal and vertical centerlines. First and second gate regions have a first shape that surrounds the first and second drain regions, respectively. First and second source regions are arranged adjacent to and on one side of the first gate region, the second gate region and the connecting region. The first source region, the second source region, the first drain region and the second drain region communicate with at least two of the N plane-like metal layers.
Public/Granted literature
- US20080237649A1 Integrated circuits and interconnect structure for integrated circuits Public/Granted day:2008-10-02
Information query
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