Invention Grant
US07989864B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity
失效
用于增强具有粗糙特征的电容器以增加电荷存储容量的方法
- Patent Title: Methods for enhancing capacitors having roughened features to increase charge-storage capacity
- Patent Title (中): 用于增强具有粗糙特征的电容器以增加电荷存储容量的方法
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Application No.: US12538779Application Date: 2009-08-10
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Publication No.: US07989864B2Publication Date: 2011-08-02
- Inventor: Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
- Applicant: Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
Abstract:
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
Public/Granted literature
- US20090294819A1 METHODS FOR ENHANCING CAPACITORS HAVING ROUGHENED FEATURES TO INCREASE CHARGE-STORAGE CAPACITY Public/Granted day:2009-12-03
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